preliminary datasheet general purpose itvs, 4 i/os, c i/o-vss <0.65pf at1240 sept. 2011 rev. 1.0 bcd semiconductor manufacturing limited 1 general description bcd itvs (integrated transient voltage suppression) devices are designed and built using bcd proprietary process technology. these devices integrate the various diodes, transistors and resistors into the bcd itvs products. these diodes and transistors feature low parasitic resistance and the diodes also exhibit low capacitance. using these devices, bcd is able to design voltage clamping products where low capacitance associated with low dynamic resistance is required. the bcd at1240 is designed to compensate for the capacitance variance introduced by the dfn-2.51.0-10 package allowing for capacitance matching between the 4 i/os when, as in normal operation, pins, 1 and 10, 2 and 9, 4 and 7, 5 and 6 are shorted. the at1240 is available in the dfn-2.51.0-10 package. this package allows simple and optimal placement in existing hi gh-speed pcb layouts. features ? clamping voltage: 9v at 10a 100ns, tlp 10.5v at 6a 8 s/20 s ? iec 61000-4-2: 16kv (air) 14kv (contact) ? iec 61000-4-4: tbd ? iec 61000-4-5: 6a ? input capacitance from i/o to vss: 0.5pf ? tlp dynamic resistance: 0.25 ? ? monolithic silicon technology applications ? usb 3.0 ? usb 2.0 ? dvi ? ethernet port: 10/100/1000 mb/s ? hdmi 1.3, high definition multi media ? ieee 1394 to 3.2gb/s ? mddi ? pci express ? sata /esata pin configuration dn package (dfn-2.51.0-10) i/o 1 i/o 2 i/o 3 i/o 4 vss nc 1 2 3 4 56 7 8 9 10 pin 1 mark nc vss nc nc figure 1. pin configuration of at1240 (top view)
preliminary datasheet general purpose itvs, 4 i/os, c i/o-vss <0.65pf at1240 sept. 2011 rev. 1.0 bcd semiconductor manufacturing limited 2 circuit diagram figure 2. circuit diagram of at1240 ordering information at1240 - circuit type package dn: dfn-2.5 1.0-10 package temperature range part number marking id packing type dfn-2.5 1.0-10 -55 to 85c at1240dn-5. 0trg1 bgc tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. g1: green tr: tape & reel 5.0: fixed output 5.0v
preliminary datasheet general purpose itvs, 4 i/os, c i/o-vss <0.65pf at1240 sept. 2011 rev. 1.0 bcd semiconductor manufacturing limited 3 absolute maximum ratings (note 1) parameter symbol min typ max unit peak pulse current (tp 8 s/20 s) 6 a peak pulse power (tp 8 s/20 s) 65 w operating voltage (dc) -0.5 6 v iec61000-4-2 esd (air) -16 16 kv iec61000-4-2 esd (contact) -14 14 kv 6 a iec61000-4-5 (lightning) 65 w lead temperature (soldering, 10sec) t lead 260 oc operating temperature -55 85 oc storage temperature -55 150 oc note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. electrical characteristics t a =25oc, unless otherwise specified. parameter symbol conditions min typ max unit reverse working voltage, i/o to vss i i/o-vss =1ma 5.5 v forward working voltage, i/o to vss i f = ?1ma -0.7 v channel leakage current i r operating voltage 0.5 a reverse breakdown voltage v br at 1ma 5.5 v holding voltage v h 5.5 v clamping voltage (surge) (iec61000-4-5) at 6a 10.5 v trigger voltage v trig 9.5 v esd clamping voltage at 10a, tlp, 100ns 9 v dynamic reverse resistance r diff-r 0.25 0.3 ? dynamic forward resistance r diff-f 0.15 ? channel input capacita nce (i/o to vss) c i/o (note 2) v i/o =2.5v, v ss =0v, f=1mhz 0.55 0.65 pf delta c i/o c i/omax -c i/omin 0.04 pf note 2: c i/o1 =c pin1 +c pin10 , c i/o2 =c pin2 +c pin9 , c i/o3 =c pin4 +c pin7 , c i/o4 =c pin5 +c pin6 .
preliminary datasheet general purpose itvs, 4 i/os, c i/o-vss <0.65pf at1240 sept. 2011 rev. 1.0 bcd semiconductor manufacturing limited 4 typical performance characteristics t a =25c, unless otherwise specified. figure 3. bv, trigger voltage, holding voltage figure 4. current from i/o to vss vs. temperature vs. voltage from i/o to vss figure 5. clamping voltage figure 6. waveform of i/o to vss (positive) vs. current from i/o to vss (8 s/20 s) -60 -40 -20 0 20 40 60 80 100 120 140 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 bv, trigger voltage, holding voltage (v) temperature ( o c) bv v trig v h v clamp =10.5v 5v/div current waveform, (surge, 8x20 s, i pp =5.8a) 5v/div time 10 s/div 1234567 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 clamping voltage (v) current from i/o to vss (8 s/20 s) (a) iec 61000-4-5 (lightning) 012345678910 0 1 2 3 4 5 6 7 8 9 10 11 current from i/o to vss (a) voltage from i/o to vss (v)
preliminary datasheet general purpose itvs, 4 i/os, c i/o-vss <0.65pf at1240 sept. 2011 rev. 1.0 bcd semiconductor manufacturing limited 5 typical performance characteristics (continued) t a =25c, unless otherwise specified. figure 7. input capacitance vs. input voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 f=1mhz, t a =25 o c input capacitance (pf) input voltage (v)
preliminary datasheet general purpose itvs, 4 i/os, c i/o-vss <0.65pf at1240 sept. 2011 rev. 1.0 bcd semiconductor manufacturing limited 6 mechanical dimensions dfn-2.51.0-10 unit: mm(inch) m i n mm(inch) max
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